Global Journal of Researches in Engineering, G: Industrial Engineering, Volume 23 Issue 2

© 2023. E. A. Kerimov. This research/review article is distributed under the terms of the Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0). You must give appropriate credit to authors and reference this article if parts of the article are reproduced in any manner. Applicable licensing terms are at https://creativecommons.org/licenses/by-nc-nd/4.0/. Global Journal of Researches in Engineering: G Industrial Engineering Volume 23 Issue 2 Version 1.0 Year 2023 Type: Double Blind Peer Reviewed International Research Journal Publisher: Global Journals Online ISSN: 2249-4596 & Print ISSN: 0975-5861 Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact By E. A. Kerimov Azerbaijan Technical University Abstract- Measured resistivities of produced silicide showed their good conductive properties. The calculation of technological route for obtaining thin silicide contacts (<100A0) in multilayer metallization of Si substrate was carried out, and the optimal technological regimes for obtaining Pd, Pt and Ni silicide in single-layer metallization of Si substrate were determined. Keywords: resonant-frequency method, optical constants, multibeam interferometry method, quartz element. GJRE-G Classification: LCC: TK7874 PhotosensitiveStructurewithSchottkyBarrierBasedonNickelSiliconSiliconContact Strictly as per the compliance and regulations of: