Global Journal of Researches in Engineering, G: Industrial Engineering, Volume 23 Issue 2

Figure 1: Cross Section of Nickel Silicon-Silicide NiSi - Si Structure II. D iscussion of R esults Figures 2 and 3 show the V- Icharacteristics of the NiSi - Si and NiSi 2 - Si structures, and figures 3 and 4 show the inverse V- I characteristics of the NiSi - Si structures in the absence of incident radiation. 3 and 4 the inverse V- I characteristics of NiSi - Si structures in the absence and presence of incident radiation. Figures 2 and 3 show that the V- I characteristics of NiSi - p - Si and NiSi 2 - p - Si structures at room temperature are very different. Fig. 2: The V- I Characteristic of NiSi - p - Si Structure at T = 300 K © 2023 Global Journals Global Journal of Researches in Engineering Volume XxXIII Issue II Version I 22 Year 2023 ( ) G Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact