Global Journal of Researches in Engineering, G: Industrial Engineering, Volume 23 Issue 2

Fig. 3: The V- I Characteristic of NiSi 2 - p - Si Structure at T = 300 K Fig. 4: Inverse V- I Characteristics of NiSi - p - Si Structure: 1 - in Absence of Illumination, 2 - with Light Illumination λ = 2 µm Inverse currents differ by more than an order of magnitude and it was found that for the NiSi 2 - p - Si structures the V- I characteristic does not change its appearance up to frequencies of 100 kHz, but for the NiSi - p - Si structures at frequencies above 1 kHz strong distortions of the V- I characteristic are observed. A spectrophotometer IKS-14A tuned to a wavelength λ = 2 µm was used as a light source. The light hits the silicide from the Si side (back illumination). © 2023 Global Journals Global Journal of Researches in Engineering Volume XxXIII Issue II Version I 23 Year 2023 ( ) G Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact