Global Journal of Researches in Engineering, G: Industrial Engineering, Volume 23 Issue 2

Fig. 5: Inverse V- I Characteristicsof NiSi 2 - p - Si Structure: 1 - in Absence of Illumination, 2 - with Light Illumination λ = 2 μ m As can be seen from fig. 4 and 5 a considerable change of a current through the investigated structures at illumination is observed: the current through the investigated structures at illumination increases in 100 - 200 times at small values of the applied reverse voltage (V R = 200 - 800 mV), in 10 - 50 times at higher reverse biases (V R = 1 - 2 V); at voltages 4 - 6 V a current change makes only 1,1 - 5 times, i.e. the best mode of structures with the Schottky barrierNiSi - p - Si V R = 1 - 2 V. At higher voltages the leakage currents increase and also breakdown of investigated samples occurs. For structures NiSi - p - Si and NiSi 2 a considerable change of current at illumination at wavelength λ = 2 µm at various values of applied reverse bias (V R = 0,1 - 5 V) was observed. Fig. 6: Dependence of R 1/2 ·h ν Value on Barrier Height for NiSi - p - Si Structures: T = 80 K; V R = 154 mV © 2023 Global Journals Global Journal of Researches in Engineering Volume XxXIII Issue II Version I 24 Year 2023 ( ) G Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact