Global Journal of Researches in Engineering, G: Industrial Engineering, Volume 23 Issue 2

Fig. 7: Dependence of R 1/2 ·h ν Value on Barrier Height for NiSi - p - Si Structures: T = 80 K; V R = 380 mV The experimental results for photosensitivity are in accordance with the refined Fowler formula [5]. These data were used to determine the Schottky barrier height. Figures 6, 7 and 8 the dependences R 1/2 ·h ν on the incident photon energy h ν are plotted. The point of intersection with the energy axis gives the barrier height, which is for NiSi - Si structures Ψ ms = 0.46 eV. Fig. 8: Dependence of R 1/2 ·h ν Value on Barrier Height for NiSi - p - Si Structures: T = 80 K; V R = 0 mV Figures 9, 10 and 11 show experimental dependences of sensitivity of structures PdSi - p - Si, Pt 2 Si - p - Si and PtSi - p - Si at temperature T = 77(80 K) at constant incident radiation power. The measurements were made on a spectrophotometer IKS- 31 (temperature of the global bar T = 500 0 C). Samples PdSi - p - Si and PtSi - p - Si were made according to previously described technique. Figures 9, 10 and 11 show that the wavelength dependence of photosensitivity is approximately described by Fowler formula. The Schottky barrier height determined from the photoelectric measurements obtained from the © 2023 Global Journals Global Journal of Researches in Engineering Volume XxXIII Issue II Version I 25 Year 2023 ( ) G Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact