Global Journal of Researches in Engineering, G: Industrial Engineering, Volume 23 Issue 2

dependence R 1/2 ·h ν = f(h ν ) was Ψ ms = 0,38 eV for PdSi - p - Si and Ψ ms = 0,26 eV for PtSi - p - Si (fig. 11). The values of the Schottky barrier heights obtained in this way were also confirmed by photoelectric measurements. A study of the annealing temperature dependence for the PtSi - p - Si and PtSi - n - Si structures has shown that φ B for the first type structure weakly depends on the annealing temperature, while for the second type structure this dependence passes through a maximum. The latter character of the dependence has found its explanation in the multicontact theory [6,7]. Fig. 9: Dependence of R 1/2 ·h ν Value on Incident Photon Energy for PdSi - p - Si Structure at T = 77 0 K Figure 10: Spectral Dependence of Sensitivity of Pt 2 Si - p - Si Structure at T = 80 K © 2023 Global Journals Global Journal of Researches in Engineering Volume XxXIII Issue II Version I 26 Year 2023 ( ) G Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact