Global Journal of Researches in Engineering, G: Industrial Engineering, Volume 23 Issue 2

Fig. 11: Dependence of R 1/2 ·h ν Value on Energy of Incident Photons for PtSi - p - Si Structure at T = 80 K It is shown that the direct currents of these structures are proportional to their active area. It is found that all characteristic parameters of contacts made on Si substrate (111) are somewhat lower than those of contacts made on Si substrate (100). III. Conclusion It is found that the sensitivity of the NiSi - p - Si structure is significantly higher than that of the NiSi 2 - p - Si structures. In addition, an increase in sensitivity with decreasing nickel silicide thickness was observed. The optimum mode of operation of the NiSi - p - Si structure and its photosensitivity at a wavelength of 2 μ m, which was R = 0,05 – 0,1 mA/W, were determined. L iterature 1. V.N. Brudniy, N.Q. Kolin, L.S. Smirnov. Model samokompensachii i stabilizachiya urovnya Fermi v obluchennikh poluprovodnikax // Fizika i tekhnika poluprovodnikov, 2007, tom 41, vip. 9, s. 1031- 1040. 2. M. B. Shapochkin. Statisticheskaya fizika / M. B. Shapochkin. – M.: İzdat. dom Mosk. Fiz. o-va, 2004, s. 85. 3. V. A. Qoldade, L. S. Pinchuk. Fizika kondensirovannoqo sostoyaniya. Belorusskaya nauka, 2009, s. 648. 4. A. Q. Zakharov. Fizicheskiye osnovi mikroelektroniki: ucheb. posobiye / A.Q. Zakharov. 2-ye izd., pererab. i dop. – Taqanroq: İzdatelstvo TRTU, 2006, s. 335. 5. V. D. Frolov. Razmerniy effekt v rabote vixoda elektronov / V.D. Frolov, S.M. Pimenov, V.İ. Konov, E.N. Lubnin // Rossiyskiye nanotekhnoloqii. 2008, t. 3, s. 102. 6. Ya. Ya. Kudrik, V.V. Shinkarenko, V.S. Slepokurov, R.İ. Biqun, R.Ya. Kudrik. Metodi opredeleniya visoti baryera Shottki iz volt-ampernikh kharakteristik// Optoelektronika i poluprovodnikovaya tekhinka, 2014, vip. 49, s. 21-28. 7. V.İ. Shashkin, A.V. Murel, V.M. Danilchev, O.İ. Khrikin. Upravleniye kharakterom tokoperenosa v baryere Shottki s pomoshyu δ -leqirovaniya: raschet I eksperiment dlya Al/GaAs // Fizika i tekhnika poluprovodnikov, 2002, tom 36, vip. 5, s. 537-542. © 2023 Global Journals Global Journal of Researches in Engineering Volume XxXIII Issue II Version I 27 Year 2023 ( ) G Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact